S602TS Switching Thyristors - Sx02xS Series - EV Series 1.5 Amp Sensitive Gate SCRs

Part Number: S602TS

Sx02xS Series - EV Series 1.5 Amp Sensitive Gate SCRs

New 1.5Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR’s junctions are glass passivated to ensure long term reliability and parametric stability.

Features

RoHS Compliant

Through hole and surface mount packages

Blocking voltage

(V_DRM/V_RRM) capability - to 600V

Surge capability > 15A

Improved turn-off time (Tq) < 35μsec

Sensitive gate for direct microsprocessor interface

Application
The Sx02xS series is specifically designed for Gas Ignition applications that require high pulse surge current capability.

Help	Property	Value
Package Size/Form Factor Close Info	Package Size	SOT-223
Maximum rated continuous on-state current. Close Info	On-State Current (Itrms) (A)	1.5
Maximum allowable instantaneous value of repetitive off-state voltage that may be applied across a bi-directional thyristor (forward or reverse direction) or SCR (forward direction only). Close Info	Repetitive Peak Off-State Voltage (VDRM) (V)	600
Maximum leakage current that may occur under the conditions of V_DRM. Close Info	I_DRM@V_DRM 25°C (mA)	0.005
Maximum leakage current that may occur under the conditions of V_DRM. Close Info	I_DRM@V_DRM 125°C (mA)	0.5
Maximum gate current required to switch a thyristor from the off state to the on state. Close Info	Max Gate Trigger Current (I_GTMAX) (μA)	200
Peak on-state voltage at maximum rated RMS current Close Info	V_TM (V)	1.7
Maximum rated one-cycle AC current. Close Info	Non-Repetitive Surge Current (I_TSM 60Hz) (A)	15
Maximum rated value of the acceptable rate of rise in current over time. Close Info	di/dt @ 110°C (A/μs)	50
measured @ rated V_DRM with gate open. Close Info	dv/dt @ 125°C (V/μs)	25
Time internal between the 10% rise of the gate pulse and the 90% rise of the principal current pulse during switching of a thyristor from the off state to the on state. Gate Pulse=100mA; minimum width=15µs with rise time Close Info	T_GT (μs)	3
(Circuit-commutated Turn-off Time) -Time interval between the instant when the principal current has decreased to zero after external switching of the principal voltage circuit and the instant when the SCR is capable of supporting a specified principal voltage without turning on. Close Info	T_q(μs)	25

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