NGB18N40ACLBT4G - NGB18N40A Series

NGB18N40ACLBT4G

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Ideal for Coil-on-Plug Applications
  • New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated Gate-Emitter ESD Protection
  • Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor and Gate-Emitter Resistor

Applications:

  • Ignition Systems

End Products:

  • Automotive