NGB8206ANT4G - NGB8206A Series

NGB8206ANT4G

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)

Applications:

  • Ignition Systems
  • Direct Fuel Injection
  • Coil-on-Plug
  • Driver-on-Coil

End Products:

  • Automotive