NGB8207ABNT4G - NGB8207AB Series

NGB8207ABNT4G

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Ideal for Coil-on-Plug and Driver-on-Coil Applications
  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Gate Resistor (RG) = 70

Applications:

  • Ignition Systems

End Products:

  • Automotive