NGD18N45CLBT4G - NGD18N45 Series

NGD18N45CLBT4G

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • DPAK Package Offers Smaller Footprint and Increased Board Space
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated Gate-Emitter ESD Protection
  • Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Emitter Ballasting for Short-Circuit Protection
  • This is a Pb-Free Device

Applications:

  • Ignition Systems

End Products:

  • Automotive