LFUSCD30120B - LFUSCD30120B Series

Not recommended for new designs

The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features:

  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature 
  • Enhanced surge capability 
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes

Applications:

  • Boost diodes in power factor correction
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
Property (Mouseover for details) Value
VRRM(V) 1200
Forward Voltage Drop VF (V) 1.5
Reverse Current IR (µA) 600
Peak Forward Surge Current IFSM (A) 240
QC (nC) 120
Package Type TO247-3L
TJ Max (°C) 175
Configuration Common Cathode
IF(AV) 30
Package Size TO247-3L
Mounting Method Through Hole
Technology SiC Schottky Diode
RoHS Yes