LSIC2SD120C10 Series - GEN2 SiC Schottky Diode, 1200 V, 10 A, TO-252-2L (DPAK)

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features:

  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes

Applications:

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

Access specifications, certifications, check availability and order parts below

Catalog #VRRM(V)Forward Voltage Drop VF (V)Reverse Current IR (µA)Peak Forward Surge Current IFSM (A)QC (nC)Package TypeTJ Max (°C)ConfigurationIF(AV)SizeStockSamples
LSIC2SD120C1012001.51008057TO252-2L175Single33TO252-2LCheckOrder