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SESD0402P1BN-0450-090
SESD0402P1BN-0450-090 | Series: ChipSESD
Our ESD devices offer many advantages over traditional protection devices, such as multi-layer varistors (MLVs), which may degrade or distort the signal in high data rate circuits. Compared to miniature gas discharge tubes (GDTs), ESD devices provide a more compact form factor and an economical solution for the shrinking profiles of today’s compact information appliances.
| Property | Value |
|---|---|
VR (Vstandoff) | 6 |
ILeak (µA) | 1 |
Clamp Voltage | 10 |
CI/O TYP (pF) | 4.5 |
Polarity | Bidirectional |
MIN VBR@IT (V) | 9 |
Operating Temperature | -40° to 125°C |
Package | SOD882 |
Clamping Voltage_string | 10 |
- Halogen Free and Bi-Directional Protection
- Halogen free (refers to: Br.900ppm, Cl.900ppm, Br.+Cl.1500ppm)
- 0.25 pF (typical) capacitance
- Low-leakage current
- Low-clamping voltage
- Fast response time (< 1ns)
- Capable of withstanding numerous ESD strikes
- Compatible with standard reflow installation procedures
- Thick film technology
- Bidirectional protection
SESD0402P1BN-0450-090 Applications
- Computers, Digital Screens, and Mobile Devices
- HDMI 1.3 interfaces
- LCD and plasma TV
- Cellular phones
- Antennas
- Portable video players
- Portable devices (PDA, DSC, BlueTooth)
- Printer ports
- Satellite radios
- USB 2.0 and IEEE 1394 interfaces
SESD0402P1BN-0450-090 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| RF2012-000 | SESD0402P1BN-0450-090 |  11/1/2016 |  11/1/2016 |  CoC_RoHS10_RF2012-000_SESD0402P1BN-0450-090 | Yes11/1/2016 | View More |
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