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SLVU2.8-4BTG-S

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TVS Diode Array SLVU2_8_4BTG_S Image

SLVU2.8-4BTG-S

4Ch 30KV 2.8V 2pF-max TVS Array SOIC-8 | Series: SLVU2.8-4BTG-S
info

The SLVU2.8-4BTG-S was designed to protect low voltage, CMOS devices from ESD and lightning induced transients.

There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected. These robust structures can safely absorb repetitive ESD strikes at ±30kV (contact discharge) per IEC61000-4-2 standard and each structure can safely dissipate up to 40A (IEC61000-4-5 2nd edition, tP=8/20μs) with very low clamping voltages.
PropertyValue
VR (Vstandoff)
1.1
ILeak (µA)
1
ESD Contact (kV)
±30
ESD Air (kV)
±30
Lightning Immunity (8x20µs)(A)
40
Clamp Voltage
9V@5A
Polarity
Unidirectional
Channels
4
MIN VBR@IT (V)
3
Package
SOIC-8L
Dynamic Resistance
1.1
CMAX
2
Record Type
H
Item Records
0
Clamping Voltage_string
9V@5A
  • ESD, IEC61000-4-2, ±30kV contact, ±30kV air
  • EFT, IEC61000-4-4, 40A (5/50ns)
  • Lightning, IEC61000-4-5, 2nd edition, 40A (8/20μs)
  • Low capacitance of 2pF per line
  • Low leakage current of 1μA (MAX) at 2.8V
  • SOIC-8 (JEDEC MO-012) pin configuration allows for simple flow-through layout
  • Lead-free, halogen-free, and RoHS compliant

SLVU2.8-4BTG-S Applications

Highlights Section

  • 10/100/1000 Ethernet Interfaces
  • WAN/LAN Equipment
  • Switching Systems
  • Desktops, Servers, and Notebooks
  • Analog Inputs
  • Base Stations

SLVU2.8-4BTG-S Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
SLVU2.8-4BTG-S4Ch 30KV 2.8V 2pF-max TVS Array SOIC-8RoHS2/22/2016Pb-Free2/22/2016No

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