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SC1105-01UTG

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littelfuse tvs diode array SC11xx image

SC1105-01UTG

5V 80A 30kV DFN1610-2L Uni-dir TVS | Series: SC11xx
info

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact and air discharge, IEC 61000- 4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SC1105) of 8/20μs surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.

PropertyValue
AEC-Q101 Qualified
No
VR (Vstandoff)
5
ILeak (µA)
1
ESD Contact (kV)
±30
ESD Air (kV)
±30
Lightning Immunity (8x20µs)(A)
80
Clamp Voltage
11.8V@80A
CI/O TYP (pF)
660
Polarity
Unidirectional
Channels
1
MIN VBR@IT (V)
6
Package
uDFN1610
Dynamic Resistance
0.04
Record Type
H
Item Records
0
Clamping Voltage_string
11.8V@80A
  • IEC 61000-4-2 ESD protection: ±30kV by contact and ±30 kV through air
  • IEC 61000-4-4 EFT protection: 40 A (5/50 ns)
  • Lightning, IEC 61000- 4-5 2nd edition, 80 A (tP=8/20μs, SC1105)
  • Low clamping voltage
  • Low leakage current
  • Moisture Sensitivity Level(MSL -1)
  • Lead free and RoHS compliant

SC1105-01UTG Applications

Highlights Section

  • Switches and Buttons
  • Test Equipment and Instrumentation
  • Point-of-Sale Terminals
  • Medical Equipment
  • Notebooks, Desktop Computers, and Servers
  • Computer Peripherals

SC1105-01UTG Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
SC1105-01UTG5V 80A 30kV DFN1610-2L Uni-dir TVSRoHS1/12/2021Pb-Free1/12/2021Pdf IconCoC_RoHS10_SC1105-01UTGPdf IconREACH_SVHC Declaration_SC1105-01UTG.pdfDoes Not ContainYes1/12/2021Pdf IconIPC_SC1105-01UTG_EF

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