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SP1001-02XTG

Product Status| Activei

SP1001-02XTG

2 Ch 8kV 8pF SPA SOT553 | Series: SP1001
info

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high-speed signal pins.

PropertyValue
AEC-Q101 Qualified
Yes
VR (Vstandoff)
5.5
ILeak (µA)
0.5
ESD Contact (kV)
15
ESD Air (kV)
30
Lightning Immunity (8x20µs)(A)
2
Clamp Voltage
8V@1A
CI/O TYP (pF)
8
Polarity
Unidirectional
Channels
2
MIN VBR@IT (V)
6
Package
SOT553
Dynamic Resistance
0.8
CMAX
12
Device Description
8pF 15kV Unidirectional TVS Array
Device Description_string
8pF 15kV Unidirectional TVS Array
Clamping Voltage_string
8V@1A
  • Low capacitance of 8pF (TYP) per I/O
  • ESD protection of ±15 kV contact discharge, ±30kV air discharge, (Level 4, IEC61000-4-2)
  • EFT protection, IEC61000-4-4, 40A (5/50ns)
  • Low maximum leakage current of 0.5 μA at 5 V
  • Small package saves board space
  • Lightning Protection, IEC61000-4-5, 2A (8/20µs)
  • AEC-Q101 Qualified

SP1001-02XTG Applications

Highlights Section

  • Computer Peripherals
  • Mobile Phones
  • Digital Cameras
  • Desktops/Notebooks
  • LCD/PDPTVs
  • SetTop Boxes
  • DVD Players
  • MP3/PMP

SP1001-02XTG Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
SP1001-02XTG2 Ch 8kV 8pF SPA SOT553RoHS11/30/2009Pb-Free1/1/2010Pdf IconCoC_RoHS10_SP1001-02XTGPdf IconREACH201_Declaration_SP1001-02XTGDoes Not ContainYes

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