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SP1011-04UTG

Product Status| Obsoletei

SP1011-04UTG

4 Ch 15KV 5V TVS Diode Array uDFN | Series: SP1011
info

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protection high-speed signal pins.

PropertyValue
VR (Vstandoff)
6
ESD Contact (kV)
15
ESD Air (kV)
30
Lightning Immunity (8x20µs)(A)
2
Clamp Voltage
7.8V@1mA
CI/O TYP (pF)
7
Polarity
Bidirectional
Channels
4
Package
uDFN1210-6L
Record Type
H
Item Records
0
Clamping Voltage_string
7.8V@1mA
  • RoHS compliant and lead-free
  • ESD, IEC 61000-4-2, ±15kV contact, ±30kV air
  • Lightning, 2A (8/20μs as defined in IEC 61000-4-5 2nd Edition)
  • Low capacitance of 7 pF (TYP) per I/O @ 2.5V
  • Low leakage current of 1μA (MAX) at 5V
  • Tiny μDFN( JEDEC MO-229) package (1.25mm x 1.0mm x 0.5mm)
  • EFT protectionIEC 61000-4-4, 40A (5/50ns)

SP1011-04UTG Applications

Highlights Section

  • LCD/PDP TV
  • DVD Player
  • Desktop
  • Set Top Box
  • Mobile Phone
  • Notebook
  • MP3/PMP
  • Digital camera

SP1011-04UTG Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
SP1011-04UTG4 Ch 15KV 5V TVS Diode Array uDFNRoHS2/9/2000Pb-Free1/1/2010Pdf IconCoC_RoHS10_SP1011-04UTGPdf IconREACH_SVHC Declaration_SP1011-04UTG.pdfDoes Not ContainYesPdf IconIPC_SP1011-04UTG_EH

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