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Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±8kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely withstand 1.0A surge (8/20 waveshape as defined in IEC 61000-4-5 2nd edition) at a very low clamping voltage.
- ESD, IEC 61000-4-2,±8kV contact, ±15kV air
- EFT, IEC 61000-4-4, 40A (5/50ns)
- Lightning, 1.0A (8/20 as defined in IEC 61000-4-5 2nd edition)
- Low capacitance of 8.5 pF (@ VR=0V)
- Low leakage current of 0.02μA (TYP) at 5V
- Unidirectional solutions presents half the dynamic resistance of a bidirectional device protects fasten and better
- Industry’s smallest ESD footprint available (01005 DFN plastic)
- Halogen free, Lead free and RoHS compliant
- Moisture Sensitivity Level(MSL -1)
- AEC-Q101 qualified
SP1053 Parts
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Filters
SP1053 Applications
- Mobile Phones
- Smart Phones
- Camcorders
- Portable Medical
- Digital Cameras
- Wearable Technology
- Portable Navigation Components
- Tablets
- Point of Sale Terminals
- Identification Modules
