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IXBH40N160

Name: Disc IGBT BiMosfet-High Volt
Brand: Littelfuse

Product Status| Not for New Designsi

Littelfuse Power Semi TO-247 3 H 2Sq 1W2N 3L image

IXBH40N160

Disc IGBT BiMosfet-High Volt | Series: High Voltage

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Property	Value
Status	Not for New Designs
V_CES (V)	1600
I_C @ 25 °C (A)	33
V_CE(sat) (V)	6.2
Configuration	Copack (FRED)
Package Type	TO-247AD
t_f (ns)	40
R_thJC (K/W)	0.35
I_C @ 90 °C (A)	20
Driving Voltages (V)	15

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUSTM packages

Eliminates multiple series-parallel lower voltage, lower current rated devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

IXBH40N160 Applications

Highlights Section

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

IXBH40N160 Resources

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Part Number	Part Description	RoHS	Pb-Free	RoHS (2015/863/EU) Certificate	REACH (SVHCs) Declaration	REACH (SVHCs)	Halogen Free	IPC-Material Declaration
IXBH40N160	Disc IGBT BiMosfet-High Volt								View More

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