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IXBF28N300
| Series: Very High Voltage
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
Advantages:
- Low gate drive requirements
- Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
- Easy to mount
| Property | Value |
|---|---|
Status | Obsolete |
VCES (V) | 3000 |
IC @ 25 °C (A) | 50 |
VCE(sat) (V) | 2.7 |
Configuration | Copack (FRED) |
Package Type | ISOPLUS i4-PAC™ |
tf (ns) | 3660 |
RthJC (K/W) | 0.58 |
IC @ 90 °C (A) | 28 |
Driving Voltages (V) | 15 |
- Free intrinsic body diode
- High power density
- High frequency operation
- Low conduction losses
- MOS gate turn on for drive simplicity
- 4 kV electrical isolation
IXBF28N300 Applications
- Switched-mode and resonant-mode power supplies
- Uninterruptible Power Supplies (UPS)
- Laser and X-ray generators
- Capacitor discharge circuits
- High voltage pulser circuits
- High voltage test equipment
- AC switches
IXBF28N300 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXBF28N300 | View More |
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