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T0900DF65A
| Series: Capsule Type
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.
| Property | Value |
|---|---|
VCES (V) | 6500 |
ICM (A) | 1800 |
VCE(sat) (V) | 4.8 |
Turn-on Energy (J) | 6.3 |
Eoff (J) | 5.1 |
TJ Max (°C) | 125 |
Package Type | W96 |
Status | Under Development |
Vf (V) | 3.4 |
trr,max (A) | 1050 |
trr,typ (µs) | 1.2 |
Qrr (µC) | 1450 |
Thermal resistance [junction-heat sink] [Diode] (K/W) | 0.0155 |
Collector Current Rating | 900 |
Thermal Resistance - junction-heat sink - IGBT | 0.0094 |
T0900DF65A Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| T0900DF65A | View More |
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