This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
Automotive
Ideal for Coil-on-Plug Applications
Gate-Emitter ESD Protection
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy per Area
Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices