Link has been copied to clipboard
LGB8204ATH
D2PAK, IGBT3 | Series: LGB8204ATH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 400 |
ICmax (A) | 18 |
VCE(sat) (V) | 1.8 |
EAS (mJ) | 400 |
PDMAX (W) | 115 |
- Ideal for Coil-on-Plug Applications
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- New Design Increases Unclamped Inductive Switching (UIS) Energy per Area
- Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Integrated Gate-Emitter Resistor (RGE)
- Emitter Ballasting for Short-Circuit Capabiltiy
LGB8204ATH Applications
- Ignition Systems
LGB8204ATH Resources
Link has been copied to clipboardShowing 1 to 1 of 1 Total Results
Share
| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LGB8204ATH | D2PAK, IGBT3 | View More |
If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.