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NGB8206ANTF4G
IGBT 20A, 350V, N-CHANNEL | Series: LGB8206AxI
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 350 |
ICmax (A) | 20 |
VCE(sat) (V) | 1.3 |
EAS (mJ) | 250 |
PDMAX (W) | 150 |
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)
NGB8206ANTF4G Applications
- Ignition Systems
- Direct Fuel Injection
- Coil-on-Plug
- Driver-on-Coil
NGB8206ANTF4G Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| NGB8206ANTF4G | IGBT 20A, 350V, N-CHANNEL |  8/15/2016 |  9/12/2018 |  CoC_RoHS9_NGB8206ANTF4G | REACH209_Declaration_Contain-_NGB8206ANTF4G | Contains | Yes9/12/2018 | View More |
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