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LGD18N40ATH
DPAK, IGBT3 | Series: LGD18N40ATH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. This device is a significant enhancement to the standard DPAK ignition IGBT device, NGD15N41CLT4. This device offers higher Unclamped Inductive Switching (UIS) energy and lower Collector-Emitter Saturation Voltage, Vce(on).
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 400 |
ICmax (A) | 18 |
VCE(sat) (V) | 1.8 |
EAS (mJ) | 400 |
PDMAX (W) | 115 |
- DPAK Package Offers Smaller Footprint and Increased Board Space
- New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated Gate-Emitter ESD Protection
- Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor and Gate-Emitter Resistor
- Emitter Ballasting for Short-Circuit Protection
LGD18N40ATH Applications
- Ignition Systems
LGD18N40ATH Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LGD18N40ATH | DPAK, IGBT3 |  11/10/2020 |  11/10/2020 |  CoC_RoHS9_LGD18N40ATH | Yes11/10/2020 | IPC_LGD18N40ATH | View More |
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