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NGD8201BNT4G
N-CHANNEL IGNITION IGBT 2 | Series: LGD8201TH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 400 |
ICmax (A) | 20 |
VCE(sat) (V) | 1.5 |
EAS (mJ) | 435 |
PDMAX (W) | 115 |
- DPAK Package Offers Smaller Footprint for Increased Board Space
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Intergrated ESD Diode Protection
- Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
- Pb-Free Package is Avialable
NGD8201BNT4G Applications
- Ignition Systems
- Direct Fuel Injection
- Coil-on-Plug
- Driver-on-Coil
NGD8201BNT4G Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| NGD8201BNT4G | N-CHANNEL IGNITION IGBT 2 |  8/15/2016 |  8/15/2016 | Yes8/15/2016 | View More |
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