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IXHH40N150HV
Disc IGBT XPT-Hi Voltage TO-247AD | Series: MOS Gated ThyristorMOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications, switched on by a voltage applied at the gate terminal (MOS structure). Capable of carrying current up to 32kA for a period of 1 microsecond
| Property | Value |
|---|---|
VDM (V) | 1500 |
ITSM 1µs TC = 25°C (kA) | 7.6 |
ITSM 10µs TC = 25°C (kA) | 3.5 |
VT (V) | 7.5 |
rT (mΩ) | 1.2 |
Qg(on) (nC) | 99 |
tri TC = 25°C (ns) | 100 |
VGK(th) (V) | 5 |
Co-pack Diode | No |
IXHH40N150HV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXHH40N150HV | Disc IGBT XPT-Hi Voltage TO-247AD | View More |
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