background-waves

MMJX1H40N150

Product Status| Activei

MMJX1H40N150

Disc IGBT SMPD Pkg-Standard SMPD-B | Series: MOS Gated Thyristor
MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications, switched on by a voltage applied at the gate terminal (MOS structure). Capable of carrying current up to 32kA for a period of 1 microsecond
PropertyValue
VDM (V)
1500
ITSM 1µs TC = 25°C (kA)
15.5
ITSM 10µs TC = 25°C (kA)
6.4
VT (V)
6
rT (mΩ)
1.2
Qg(on) (nC)
99
tri TC = 25°C (ns)
100
VGK(th) (V)
5
Co-pack Diode
No

MMJX1H40N150 Resources

Showing 1 to 1 of 1 Total Results
Share
Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
MMJX1H40N150Disc IGBT SMPD Pkg-Standard SMPD-B

If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.