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Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system.
The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI).
Advantages:
- Higher efficiency
- Elimination of multiple series-connected devices
- Increased reliability of power systems
- Thin wafer XPT™ technology
- Low on-state voltages VCE(sat)
- Co-packed fast recovery diodes
- Positive temperature coefficient of VCE(sat)
- International standard size high-voltage packages
High Voltage Parts
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Filters
High Voltage Applications
- Pulser circuits
- Laser and X-ray generators
- High-voltage power supplies
- High-voltage test equipment
- Capacitor discharge circuits
- AC switches
