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IXYH16N170CV1
Disc IGBT XPT-Hi Voltage TO-247AD | Series: High Voltage
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system.
The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI).
Advantages:
- Higher efficiency
- Elimination of multiple series-connected devices
- Increased reliability of power systems
| Property | Value |
|---|---|
VCES (V) | 1700 |
IC @ 25 °C (A) | 40 |
VCE(sat) (V) | 3.8 |
tfi (ns) | 120 |
Configuration | Copack (FRED) |
Package Type | TO-247U |
RthJC [IGBT] (K/W) | 0.48 |
Eoff @ 150 °C (mJ) | 1.95 |
IC @ 110 °C (A) | 16 |
RthJC [Diode] (K/W) | 0.7 |
Forward Current @ 110 °C (A) | 22 |
- Thin wafer XPT™ technology
- Low on-state voltages VCE(sat)
- Co-packed fast recovery diodes
- Positive temperature coefficient of VCE(sat)
- International standard size high-voltage packages
IXYH16N170CV1 Applications
- Pulser circuits
- Laser and X-ray generators
- High-voltage power supplies
- High-voltage test equipment
- Capacitor discharge circuits
- AC switches
IXYH16N170CV1 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXYH16N170CV1 | Disc IGBT XPT-Hi Voltage TO-247AD | View More |
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