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IXYA24N100A4HV
IGBT DISCRETE TO-263HV | Series: Trench
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.
Advantages:
- Ideal for high power density and high inrush currents, low loss applications
- Hard-switching capable
- Easy paralleling of devices
- Reduced gate driver requirements
- Ease of replacement and availability of isolation package
| Property | Value |
|---|---|
VCES (V) | 1000 |
IC @ 25 °C (A) | 85 |
VCE(sat) (V) | 1.9 |
tfi (ns) | 125 |
Configuration | Single |
Status | Active |
RthJC [IGBT] (K/W) | 0.4 |
Eoff @ 125 °C (mJ) | 3.7 |
IC @ 110 °C (A) | 24 |
- Low on-state voltages Vcesat
- Positive thermal coefficient of Vcesat
- International standard packages
IXYA24N100A4HV Applications
- Battery chargers
- Lamp ballasts
- Power inverters
- Uninterruptible power supplies (UPS)
- Welding machines
IXYA24N100A4HV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXYA24N100A4HV | IGBT DISCRETE TO-263HV | View More |
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