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IXYP20N120B4
IGBT DISCRETE TO-220 | Series: Trench
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.
Advantages:
- Ideal for high power density and high inrush currents, low loss applications
- Hard-switching capable
- Easy paralleling of devices
- Reduced gate driver requirements
- Ease of replacement and availability of isolation package
- Low gate drive requirements
| Property | Value |
|---|---|
VCES (V) | 1200 |
IC @ 25 °C (A) | 76 |
VCE(sat) (V) | 2.1 |
tfi (ns) | 90 |
Configuration | Single |
Package Type | TO-220 |
Status | Active |
RthJC [IGBT] (K/W) | 0.4 |
Eoff @ 125 °C (mJ) | 2.7 |
IC @ 110 °C (A) | 20 |
- Low on-state voltages Vcesat
- Optimized for medium switching frequencies 10kHz up to 30kHz
- Positive thermal coefficient of Vcesat
- International standard packages
IXYP20N120B4 Applications
- Battery chargers
- Power inverters
- Power Factor Correction (PFC) circuits
- Uninterruptible power supplies (UPS)
- Welding machines
IXYP20N120B4 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXYP20N120B4 | IGBT DISCRETE TO-220 | View More |
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