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IXFH50N80XA
| Series: Ultra Junction X Class
IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.
Space Savings
| Property | Value |
|---|---|
VDSS (V) | 800 |
RDS(ON),max @ 25 °C (Ω) | 0.105 |
ID, cont @ 25 °C (A) | 50 |
Gate Charge (nC) | 152 |
RthJC (K/W) | 0.14 |
Configuration | Single |
Package Type | TO-247 |
CISS (pF) | 4480 |
trr,typ (ns) | 218 |
PD (W) | 890 |
- International Standard Package
- High Voltage Package
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
IXFH50N80XA Applications
- Switch-Mode and Resonant-Mode Power Supplies
- Dc-dc converters
- PFC Circuits
- Ac and dc Motor Drives
- Robotics and Servo Controls
IXFH50N80XA Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFH50N80XA | View More |
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