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IXFB50N80Q2
DiscMSFT NCh HiPerFET-Q Class TO-264(3) | Series: Q2 Class
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.
Advantages:
- Easy to mount
- High power density
- Space savings
| Property | Value |
|---|---|
VDSS (V) | 800 |
RDS(ON),max @ 25 °C (Ω) | 0.16 |
ID, cont @ 25 °C (A) | 50 |
Gate Charge (nC) | 260 |
RthJC (K/W) | 0.11 |
Configuration | Single |
Package Type | TO-264 PLUS |
CISS (pF) | 7200 |
PD (W) | 1135 |
trr,max (ns) | 300 |
- International standard packages
- Double metal process for low gate resistance
- Avalanche energy and current rated
- Fast intrinsic rectifier
- Low package inductance
IXFB50N80Q2 Applications
- Dc-dc converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- Pulse generation
- Laser drivers
IXFB50N80Q2 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFB50N80Q2 | DiscMSFT NCh HiPerFET-Q Class TO-264(3) | View More |
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