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IXFM67N10
IXFM67N10 | Series: Standard
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.
Advantages:
- Easy to mount
- Space savings
- High power density
| Property | Value |
|---|---|
VDSS (V) | 100 |
RDS(ON),max @ 25 °C (Ω) | 0.025 |
ID, cont @ 25 °C (A) | 67 |
Gate Charge (nC) | 180 |
RthJC (K/W) | 0.42 |
Configuration | Single |
CISS (pF) | 4500 |
PD (W) | 298 |
trr,max (ns) | 200 |
- International Standard Packages
- High Current Handling Capability
- Low RDS(on) HDMOS process
- Avalanche Rated
- Low Package Inductance
- Fast intrinsic diode
IXFM67N10 Applications
- Dc-dc converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- Dc choppers
- AC Motor Drives
- Temperature and Lighting Controls
IXFM67N10 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFM67N10 | IXFM67N10 | View More |
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