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IXTA02N250HV

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IXTA02N250HV

DiscMosfet NCh Std-VeryHiVolt TO-263D2 | Series: Very High Voltage
info

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system.

Advantages:

  • Easy to mount
  • Space savings
  • High power density
PropertyValue
VDSS (V)
2500
RDS(ON),max @ 25 °C (Ω)
450
ID, cont @ 25 °C (A)
0.2
Gate Charge (nC)
7.4
RthJC (K/W)
1.5
Configuration
Single
Package Type
TO-263HV
CISS (pF)
116
trr,typ (ns)
1500
PD (W)
83
  • High blocking voltage
  • Proprietary high voltage ISOPLUS™ packages
  • Up to 4.5 kV electrical isolation (DCB)
  • UL 94 V-0 Flammability qualified (molding epoxies)

IXTA02N250HV Applications

Highlights Section

  • Capacitor discharge circuits
  • High voltage power supplies
  • Pulse circuits
  • Laser and X-ray generation systems
  • High voltage relay disconnect circuits
  • Energy tapping applications from the power grid

IXTA02N250HV Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
IXTA02N250HVDiscMosfet NCh Std-VeryHiVolt TO-263D2

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