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IXTF1R4N450
DiscMSFT NCh Std-VeryHiVolt I4-PAK ISO+ | Series: Very High Voltage
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system.
Advantages:
- Easy to mount
- Space savings
- High power density
| Property | Value |
|---|---|
VDSS (V) | 4500 |
RDS(ON),max @ 25 °C (Ω) | 40 |
ID, cont @ 25 °C (A) | 1.4 |
Gate Charge (nC) | 88 |
RthJC (K/W) | 0.65 |
Configuration | Single |
Package Type | I4-PAK |
CISS (pF) | 3300 |
trr,typ (ns) | 660 |
PD (W) | 190 |
- High blocking voltage
- Proprietary high voltage ISOPLUS™ packages
- Up to 4.5 kV electrical isolation (DCB)
- UL 94 V-0 Flammability qualified (molding epoxies)
IXTF1R4N450 Applications
- Capacitor discharge circuits
- High voltage power supplies
- Pulse circuits
- Laser and X-ray generation systems
- High voltage relay disconnect circuits
- Energy tapping applications from the power grid
IXTF1R4N450 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXTF1R4N450 | DiscMSFT NCh Std-VeryHiVolt I4-PAK ISO+ | View More |
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