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IXTP44N10T

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IXTP44N10T

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP | Series: Gen1
info

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Advantages:

  • Easy to Mount
  • Space Savings
  • High power density
PropertyValue
VDSS (V)
100
RDS(ON),max @ 25 °C (Ω)
0.03
ID, cont @ 25 °C (A)
44
Gate Charge (nC)
27.4
RthJC (K/W)
1.15
Configuration
Single
Package Type
TO-220
CISS (pF)
1567
trr,typ (ns)
60
PD (W)
130
  • International Standard Packages
  • Low RDS(ON)
  • Avalanche rated
  • High Current Handling Capability
  • Fast Intrinsic Rectifier

IXTP44N10T Applications

Highlights Section

  • Switch-Mode and Resonant-Mode Power Supplies
  • Dc-dc converters
  • Battery Chargers
  • Uninterrupted Power Supplies
  • AC motor drives
  • Dc choppers
  • High Speed Power Switching Applications

IXTP44N10T Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXTP44N10TDiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

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