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IXFH270N06T3

Product Status| Obsoletei

IXFH270N06T3

Disc MSFT NChTrenchGate-Gen3 TO-247AD | Series: Gen3
info

The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications.

These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching.

Advantages:

  • High power density
  • Easy to mount
  • Space savings
PropertyValue
VDSS (V)
60
RDS(ON),max @ 25 °C (Ω)
0.0031
ID, cont @ 25 °C (A)
270
Gate Charge (nC)
200
RthJC (K/W)
0.31
Configuration
Single
Package Type
TO-247
CISS (pF)
12600
trr,typ (ns)
47
PD (W)
480
  • Ultra low on-resistance RDS(on)
  • High current handling capability
  • Avalanche rated
  • Fast body diode
  • 175°C operating temperature
  • International standard packages

IXFH270N06T3 Applications

Highlights Section

  • Off-line uninterruptible power supplies (UPS)
  • Dc-dc converters
  • Brushed/brushless DC motor drive
  • High-current switching power supplies
  • Primary-side switches
  • Electric forklifts
  • Light electric vehicles (LEV)
  • Cordless home appliances and power tools
  • Unmanned aerial vehicles (UAV)

IXFH270N06T3 Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXFH270N06T3Disc MSFT NChTrenchGate-Gen3 TO-247AD

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