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IXFT60N60X3HV

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IXFT60N60X3HV

Discrete MOSFET 60A 600V X3 TO268 | Series: X3 Class
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The 600V X3-Class Ultra Junction MOSFET IXFT60N60X3HV is available in 60A nominal current rating and TO-268HV package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr).

PropertyValue
VDSS (V)
600
RDS(ON),max @ 25 °C (Ω)
0.051
ID, cont @ 25 °C (A)
60
Gate Charge (nC)
51
RthJC (K/W)
0.2
Package Type
TO-268HV
CISS (pF)
3450
trr,typ (ns)
175
PD (W)
625
TJ Max (°C)
150
CRSS (pF)
53
  • Low static losses
  • Well-suited for high frequency applications
  • Simplified thermal design
  • High ruggedness against overvoltage
  • Low gate drive power demand

IXFT60N60X3HV Applications

Highlights Section

  • Power supplies for telecom and server applications in hard- and soft-switching designs
  • Unidirectional and bidirectional DC/DC converter
  • DC-AC converter in mobile application
  • Battery charging circuits

IXFT60N60X3HV Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
IXFT60N60X3HVDiscrete MOSFET 60A 600V X3 TO268

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