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IXTK170P10P

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IXTK170P10P

Disc Mosfet P Channel-Polar TO-264(3) | Series: Polar
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Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient.

These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications.

Advantages:

  • Low gate charge results in simple drive requirement
  • High power density
  • Easy to parallel
  • Fast switching
PropertyValue
VDSS (V)
-100
RDS(ON),max @ 25 °C (Ω)
0.014
ID, cont @ 25 °C (A)
-170
Gate Charge (nC)
240
RthJC (K/W)
0.14
Configuration
Single
Package Type
TO-264
CISS (pF)
12600
trr,typ (ns)
176
PD (W)
890
  • Fast intrinsic diode
  • Rugged PolarP™ process
  • Avalanche rated
  • Low package inductance
  • Dynamic dv/dt rated

IXTK170P10P Applications

Highlights Section

  • High-side switching
  • Push pull amplifiers
  • DC-DC and DC-AC converters
  • Automatic test equipment
  • Battery charger applications
  • Current regulators

IXTK170P10P Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXTK170P10PDisc Mosfet P Channel-Polar TO-264(3)

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