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Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.
Advantages:
- Low gate charge resulting in simple drive requirement
- High power density
- Fast switching
- Fast intrinsic diode
- Low Qg and RDSon
- Avalanche rated
- Extended FBSOA
- International standard packages
Trench Gate Parts
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Filters
Trench Gate Applications
- High-side switching
- Load switches
- Low voltage applications
- High-efficiency switching power supplies
- Inverters and battery chargers
