Link has been copied to clipboard
IXSA110N65L2-7TR
SiC MOSFET in TO263-7L | Series: SIC MOSFETs
| Property | Value |
|---|---|
Status | Active |
Configuration | Single |
VDSS (V) | 650 |
RDS(ON),max @ 25 °C (Ω) | 111 |
ID, cont @ 25 °C (A) | 25 |
RthJC (K/W) | 0.25 |
TJ Max (°C) | 175 |
- 650 V blocking voltage with low RDS(on) = 25 mΩ
- Ultra-fast intrinsic body diode with trr = 42 ns
- Low input capacitance of Ciss = 3090 pF
- Kelvin source connection
- High current carrying capability
- Low conduction losses
- Suitable for hard-switching
- Supports high-speed switching
- Improved switching performance
IXSA110N65L2-7TR Applications
- DC/DC converters
- Switched-mode power supplies (SMPS)
- EV charging infrastructures
- Motor drives
- Industrial power supplies
IXSA110N65L2-7TR Resources
Link has been copied to clipboardShowing 1 to 1 of 1 Total Results
Share
| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSA110N65L2-7TR | SiC MOSFET in TO263-7L | View More |
If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.