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IXSG110N65L2K

Product Status| Activei

IXSG110N65L2K

SiC MOSFET in TOLL | Series: SIC MOSFETs
info
PropertyValue
Status
Active
Configuration
Single
VDSS (V)
650
RDS(ON),max @ 25 °C (Ω)
25
ID, cont @ 25 °C (A)
111
RthJC (K/W)
0.25
TJ Max (°C)
175
  • 650 V blocking voltage with low RDS(on) = 25 mΩ
  • Ultra-fast intrinsic body diode with trr = 44 ns
  • Low input capacitance of Ciss = 3090 pF
  • Kelvin source connection
  • High current carrying capability
  • Low conduction losses, improving system efficiency
  • Suitable for hard-switching
  • Supports high-speed switching
  • Reduced gate drive loop inductance and improved switching performance
  • Reduced number of components in parallel, simplified layout

IXSG110N65L2K Applications

Highlights Section

  • DC/DC converters
  • Switched-mode power supplies (SMPS)
  • EV charging infrastructures
  • Motor drives
  • Industrial power supplies

IXSG110N65L2K Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
IXSG110N65L2KSiC MOSFET in TOLL

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