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IXSH100N65L2KHV
SiC MOSFET in TO247-4L HV | Series: SIC MOSFETs
| Property | Value |
|---|---|
Status | Active |
Configuration | Single |
VDSS (V) | 650 |
RDS(ON),max @ 25 °C (Ω) | 25 |
ID, cont @ 25 °C (A) | 99 |
RthJC (K/W) | 0.33 |
TJ Max (°C) | 175 |
- 650 V blocking voltage with low RDS(on) = 25 mΩ
- Ultra-fast intrinsic body diode with trr = 32 ns
- Low input capacitance of Ciss = 3090 pF
- Kelvin source connection
- High current carrying capability
- Low conduction losses, improving system efficiency
- Suitable for hard-switching
- Supports high-speed switching
- Reduced gate drive loop inductance and improved switching performance
- Reduced number of components in parallel, simplified layout
IXSH100N65L2KHV Applications
- DC/DC converters
- Switched-mode power supplies (SMPS)
- EV charging infrastructures
- Motor drives
- Industrial power supplies
IXSH100N65L2KHV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSH100N65L2KHV | SiC MOSFET in TO247-4L HV | View More |
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