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IXSH110N120L3KHV
SiC MOSFET in TO247-4L | Series: SIC MOSFETs
| Property | Value |
|---|---|
Status | Active |
Configuration | Single |
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 0.0234 |
ID, cont @ 25 °C (A) | 112 |
RthJC (K/W) | 0.36 |
TJ Max (°C) | 175 |
AEC-Q101 Qualified | No |
- 3rd Generation SiC MOSFET Technology with –3.5/+15. . .18 V gate drive
- High blocking voltage with low on-state resistance
- High-speed switching with low capacitance
- 175 ºC operating junction temperature capability
- Ultra-fast and robust intrinsic body diode
- Kelvin source contact
IXSH110N120L3KHV Applications
- Motor drives
- EV charging infrastructure
- DC/DC converter
- Switch mode power supplies
- Solar inverters
IXSH110N120L3KHV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSH110N120L3KHV | SiC MOSFET in TO247-4L | View More |
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