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IXSH20N120L2KHV
SiC MOSFET in TO247-4L | Series: SIC MOSFETs
| Property | Value |
|---|---|
Status | Active |
Configuration | Single |
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 160 |
ID, cont @ 25 °C (A) | 20 |
RthJC (K/W) | 1.1 |
TJ Max (°C) | 175 |
- 1200 V blocking voltage with RDS(on) = 160 mΩ
- SiC MOSFET technology with -3/+15...+18 V gate drive
- Maximum virtual junction temperature of Tvj = 175 ⁰C
- Ultra-fast intrinsic body diode with trr between 29 nS and 30 nS
- Kelvin source connection
- Low conduction losses
- Low gate drive power requirements
- Low thermal management effort
- Suitable for hard-switching
- Optimized gate control
IXSH20N120L2KHV Applications
- Solar inverter
- Switch mode power supplies (SMPS)
- DC/DC converters
- EV charging infrastructures
- Industrial power supplies
IXSH20N120L2KHV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSH20N120L2KHV | SiC MOSFET in TO247-4L | View More |
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