Link has been copied to clipboard
IXSH65N120L2KHV
SiC MOSFET in TO247-4L | Series: SIC MOSFETs
| Property | Value |
|---|---|
Status | Active |
Configuration | Single |
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 40 |
ID, cont @ 25 °C (A) | 65 |
RthJC (K/W) | 0.4 |
TJ Max (°C) | 175 |
- 1200 V blocking voltage with RDS(on) = 40 mΩ
- Ultra-fast intrinsic body diode with trr = 42 ns
- Low input capacitance of Ciss = 2160 pF
- Kelvin source connection
- Low conduction losses
- Suitable for hard-switching
- Supports high-speed switching
- Improved switching performance
IXSH65N120L2KHV Applications
- Solar inverters
- DC/DC converters
- Switch mode power supplies (SMPS)
- Industrial power supplies
IXSH65N120L2KHV Resources
Link has been copied to clipboardShowing 1 to 1 of 1 Total Results
Share
| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSH65N120L2KHV | SiC MOSFET in TO247-4L | View More |
If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.