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IXSJ80N120R1
SiC MOSFET in ISO247-3L | Series: SIC MOSFETs
The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to reduce the on-state resistance, to minimize the power losses, while maintaining excellent switching performance. This makes them ideal for high-frequency, and high-efficiency power-management applications like DC/DC converter, switch mode power supplies, induction heating and motor drives.
| Property | Value |
|---|---|
Status | Active |
Configuration | Single |
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 0.018 |
ID, cont @ 25 °C (A) | 85 |
RthJC (K/W) | 0.47 |
TJ Max (°C) | 150 |
VISOL,RMS (V) | 2500 |
- 1200V with low RDS(on) = 18 mΩ
- SiC MOSFET Technology with 0/+15..+18 V gate drive
- High-performance ceramic based isolated package
- Isolation voltage 2500 VAC (RMS), 1 minute
- Low input capacitance 4522 pF
- Industry standard package outline
- Low conduction losses
- Low gate drive power requirements
- Improved overall thermal resistance RthJH and power handling capability
- Low thermal management requirements
- Enhanced safety and suitability for applications requiring stringent isolation standards
- Low switching losses
- Compatible with industry standard TO-247-3L package
IXSJ80N120R1 Applications
- Solar inverters
- DC/DC converters
- Switch mode power supplies
- EV charging infrastructures
- Motor drives
- Induction heating
IXSJ80N120R1 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSJ80N120R1 | SiC MOSFET in ISO247-3L | View More |
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