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IXSJ80N120R1K
SiC MOSFET in ISO247-4L | Series: SIC MOSFETs| Property | Value |
|---|---|
Status | Active |
Configuration | Single |
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 18 |
ID, cont @ 25 °C (A) | 80 |
RthJC (K/W) | 0.55 |
TJ Max (°C) | 175 |
VISOL,RMS (V) | 2500 |
- 1200 V blocking voltage with low RDS(on) = 18 mΩ and 36 mΩ
- Ultra-fast intrinsic body diode with trr = 13 ns and 26 ns
- High-performance ceramic based isolated package
- Isolation voltage 2500 VAC (RMS), 1 minute
- Low input capacitance of Ciss = 4556 pF and 2343 pF
- Kelvin source connection
- Low conduction losses and reduced heat dissipation
- Suitable for hard-switching
- Improved overall thermal resistance RthJH and power handling capability
- Enhanced safety and suitability for applications require stringent isolation standards
- Supports high-speed switching
- Improved switching performance
IXSJ80N120R1K Applications
- Solar inverters
- DC/DC converters
- Switched-mode power supplies
- EV charging infrastructures
- Motor drives
- Induction heating
IXSJ80N120R1K Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSJ80N120R1K | SiC MOSFET in ISO247-4L | View More |
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