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LSIC1MO170T0750

Product Status| Activei
Littelfuse silicon carbide LSIC1MO170TO750_image

LSIC1MO170T0750

1700V/750mohm SiC MOSFET TO-263-7L | Series: SIC MOSFETs
info

Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 °C.
These MOSFETs are ideal for high frequency applications in which high efficiency is desired.

PropertyValue
Status
Active
Package Type
TO-263-7L
VDSS (V)
1700
RDS(ON),max @ 25 °C (Ω)
0.75
ID, cont @ 25 °C (A)
4.5
RthJC (K/W)
2.3
TJ Max (°C)
175
  • Optimized for high-frequency, high-efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency switching
  • Normally-off operations at all temperatures
  • Ultra-low on-resistance
  • Optimized package with separate driver source pin
  • MSL 1 Rated

LSIC1MO170T0750 Applications

Highlights Section

  • High-frequency applications
  • Solar Inverters
  • Switch Mode Power Supplies
  • UPS
  • Motor Drives
  • High Voltage Dc–dc converters
  • Battery Chargers
  • Induction Heating

LSIC1MO170T0750 Resources

TO-263-7L 3D Model
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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
LSIC1MO170T07501700V/750mohm SiC MOSFET TO-263-7LPdf IconCoC_RoHS9_LSIC1MO170T0750Pdf IconREACH_SVHC Declaration (Contain)_LSIC1MO170T0750Contains

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