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MCB60I1200TZ
SiCarbide-Discrete MOSFET TO-268AA | Series: SIC MOSFETsIndustrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions.
| Property | Value |
|---|---|
Status | Not for New Designs |
Package Type | TO-268AA (D3Pak) (2HV) |
Configuration | N-Channel |
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 0.034 |
ID, cont @ 25 °C (A) | 90 |
RthJC (K/W) | 0.27 |
TJ Max (°C) | 175 |
MCB60I1200TZ Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| MCB60I1200TZ-TUB | SiCarbide-Discrete MOSFET TO-268AA | View More |
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