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M1502ND200
| Series: Fast Recovery Capsule Type
These parts are particularly suitable for use as anti-parallel diodes used in Gate Turn-Off and Fast Thyristor inverters and as diodes for choppers.
| Property | Value |
|---|---|
TJ Max (°C) | 150 |
Package Type | W37 |
VRRM [Diode] (V) | 2000 |
IFAV @ TK = 55 ° (A) | 1502 |
IFSM 10ms Half Sine Wave (A) | 17000 |
I2t [Diode] (A2s) | 1.45 x 10⁶ |
trr,typ (µs) | 3.5 |
Qrr (µC) | 350 |
V0 (V) | 1.24 |
rS (mΩ) | 0.44 |
RthJK 180 °C Sine Wave (K/W) | 0.022 |
M1502ND200 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| M1502ND200 | View More |
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