Multiple SiC Schottky diodes built in discrete packages, featuring separate anodes pins and a common cathode pin. The common cathode series can be used to reduce the component count in rectifier bridges, or for increased current density - for example as booster diodes. Made of SiC material, these diodes are recommended for fast switching applications, and for systems with a need to reduce the power losses and increase the power density.
Common cathode configuration
SiC Schottky diodes
175 °C maximum operating junction temperature
Zero reverse recovey
AEC-Q101 qualification
Dramatically reduced switching losses as compared to silicon Schottky diodes, zero reverse recovery
Fast and temperature independant switching
Space saving, high current density
Positive temperature coefficient for ease of paralleling