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DCK10I650PA
SiC Diode in TO220-2L | Series: SiC Schottky Diodes
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
| Property | Value |
|---|---|
VRRM (V) | 650 |
IF(AV) | 14.4 |
Peak Forward Surge Current IFSM (A) | 60 |
QC (nC) | 25.5 |
TJ Max (°C) | 175 |
Vf (V) | 1.37 |
Configuration | Single |
AEC-Q101 Qualified | No |
- Positive temperature coefficient for safe operation and ease of paralleling
- 175°C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses compared to Si bipolar diodes
- MSL 1 rated
DCK10I650PA Applications
- Boost diodes in PFC or DC/DC stages
- Switch-mode power supplies
- Uninterruptible power supplies
- Solar inverters
- Industrial motor drives
- Battery chargers
- High speed rectification
DCK10I650PA Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| DCK10I650PA | SiC Diode in TO220-2L | View More |
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